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Effect of X (X = Al³⁺, V³⁺, Sc³⁺, In³⁺ and Y³⁺) Doping on the Dielectric Properties of Lead-Free BZT Ceramics

Zhang Kaituo¹, Xu Yuan^1,2,3, Fu Lei³, Chen Ligui³, Jia Shikui³

¹ College of Cable Engineering, Henan Institute of Technology, Xinxiang 453003, China
² College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
³ School of Material Science and Engineering, Shaanxi University of Technology, Hanzhong 723003, China

received October 15, 2020, received in revised form February 16, 2021, accepted February 28, 2021

Vol. 12, No. 1, Pages 29-36   DOI: 10.4416/JCST2020-00026

Abstract

Al³⁺-, V³⁺-, Sc³⁺-, In³⁺- and Y³⁺-ion-doped lead-free X-BaZr_0.15Ti_0.85O₃(X-BZT-15) ceramics were prepared with the solid-phase reaction method. The crystal structure, micromorphology, and dielectric properties of the X-BZT-15 ceramics were studied. X-ray diffractometry shows that the prepared ceramics have a perovskite structure. Raman spectroscopy shows that the doped ions of BZT-15 ceramics do not significantly change the vibration frequency of the A₁(LO₃) mode, but have a greater impact on the new A_1 g mode. The unit cell volume first increases and then decreases as the ion radius increases. When the doped ion radius is less than 0.0885 nm (Sc³⁺), the substitution type of the doped cation is B-substitution. When the doping ion radius is greater than 0.0885 nm (Sc³⁺), the substitution type of the doped cations gradually changes from B-site substitution to A-site substitution. Electron scanning microscopy shows that the doping of Y³⁺ and V³⁺ can promote grain growth, and the doping of Sc³⁺ can refine the grains. The doping of Y³⁺ can promote polarization, the doping of V³⁺ can passivate the grain boundaries, and the doping of both ions can promote the improvement of dielectric properties. The diffuseness of the phase transition shows that as the ionic radius increases, the γ value increases. The doped ions are Sc³⁺, and the maximum value of γ is 1.877. Then γ decreases as the ion radius increases.

Keywords

Doped ionic radius, BZT, Curie-Weiss law, dielectric

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