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Microstructure, Growth Kinetics and Formation Mechanism of Oxide Layers on AlN Ceramic Substrates
Ye Cao1, Haixian Xu2, Jun Zhan2, Hao Zhang2, Song Cui2, Wenming Tang1
1 School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;
2 43 Institute, China Electronics Technology Group Corporation, Hefei 230088, China
received February 8, 2018, received in revised form March 14, 2018, accepted April 17, 2018
Vol. 9, No. 3, Pages 263-270 DOI: 10.4416/JCST2018-00011
Abstract
AlN ceramic substrates doped with 2 wt% Y2O3 were oxidized at temperatures ranging from 1000 °C to 1300 °C for various times in air. Microstructure, growth kinetics and formation mechanism of the oxide layers were studied. The results show that oxidation originates from the AlN grain boundaries and then extends into the AlN grains to form a core-shell structure composed of the unoxidized AlN core wrapped in the continuous nanocrystalline Al2O3 layer. A continuous pore network is distributed over the oxide layer and connected with the AlN reaction interface, which actually acts as the O2/N2 rapid diffusion path. As a result, oxidation of the AlN substrates follows reaction-rate-controlled kinetics. An activation energy of 260.5 kJ mol-1 of the oxidation process is then derived. Finally, a model involving the microstructure and mechanism of the oxide layer formation on the AlN substrates is established.
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Keywords
AlN ceramic substrate, oxidation, microstructure, kinetics, formation mechanism
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