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Effect of Nb Doping on Crystalline Orientation, Electric and Fatigue Properties of PZT Thin Films Prepared by Sol-Gel Process

Q. Li, X. Wang, F. Wang, J. Dou, W. Xu, H. Zou

Journal of Ceramic Science and Technology, Vol. 8, No. 4 (2018), pp. 519-524

DOI: 10.4416/JCST2017-00031

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Abstract

Pb(NbxZr0.52Ti0.48)O3 (PNZT) (x = 0 %, 1 %, 2 %, 3 %, 4 %, 5 %) thin films were prepared in a sol-gel process to investigate the effects of Nb doping on the crystalline orientation, electric and fatigue properties of lead zirconate titanate (PZT) films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that PNZT films with Nb doping concentration below 5 % exhibited a dense perovskite structure with (100) preferred orientation. The maximum dielectric constant was obtained in 4 % Nb-doped PZT film with a precision impedance analyzer. Remnant polarization and fatigue resistance were enhanced significantly with 2 % Nb dopant.

Keywords

PNZT thin films, (100) preferred orientation, microstructure, fatigue resistance, sol-gel process

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