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Effects of B₂O₃-V₂O₅ on Sinterability and Microwave Dielectric Properties of (Mg_1-xCu_x)₂SiO₄ Ceramics

Chengxi Hu, Xiechao Hu, Ze Qing Guo, Amanda Ekeminiabasi Williams

Journal of Ceramic Science and Technology, Vol. 17, No. 1 (2026), pp. 101-106

DOI: 10.4416/JCST2025-00018

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Abstract

The crystal structure, microstructure, and microwave dielectric properties of B2O3-V2O5 co-doped (Mg1-xCux)2SiO4 (x=0.05 – 0.20) ceramics were investigated. The sintering temperature was successfully reduced to about 1 250 °C/4 h for the B2O3-V2O5 co-doped (Mg1-xCux)2SiO4 specimens. The (Mg0.95Cu0.05)2SiO4 with 6 wt% B2O3 – 6 wt% V2O5 ceramics sintered at 1 250 °C for 4 h achieved excellent microwave dielectric properties of εr = 6.55, Q·ƒ = 37 500 GHz and a τƒ of - 35.65 ppm/K.

Keywords

Microwave dielectric properties, B2O3-V2O5 co-doped, (Mg0.95Cu0.05)2SiO4, microwave ceramics

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