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Room-Temperature Structural and Dielectric Properties of Praseodymium-Doped SrBi₂Nb₂O₉ Ceramics

M. Afqir, M. Afqir, A. Tachafine, D. Fasquelle, M. Elaatmani, J.-C. Carru, A. Zegzouti

Journal of Ceramic Science and Technology, Vol. 9, No. 2 (2018), pp. 209-214

DOI: 10.4416/JCST2018-00004

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Abstract

In the present work, we studied the influence of substituting Pr for Bi on the structural and dielectric properties of SrBi2-xPrxNb2O9 (x = 0, 0.2) ceramics at room temperature. The samples were prepared by the solid-state reaction method. The XRD patterns of the doped sample corresponded well with those of the undoped samples. SEM revealed that the Pr doping brings significant change to the microstructure. The results obtained from different experimental dielectrics at room temperature are correlated to discuss the structure-property relationship with consideration of the internal microstructure, the strengths of chemical bonds (Pr-O and Bi-O) and the oxidation of Pr3+ to Pr4+. The dielectric constant increased with Pr-doping, while the dielectric loss decreased. Praseodymium is introduced into SrBi2Nb2O9 to reduce the number of oxygen ion vacancies available for the conduction process.

Keywords

SrBi2Nb2O9, Pr3+/Pr4+, crystal structure, dielectrics

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