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Effects of B₂O₃-V₂O₅ on Sinterability and Microwave Dielectric Properties of (Mg_1-xCu_x)₂SiO₄ Ceramics

Chengxi Hu, Xiechao Hu, Ze Qing Guo, Amanda Ekeminiabasi Williams

Xihang university, Xi'an, Shaanxi CHINA

received June 3, 2025, received in revised form October 15, 2025, accepted October 16, 2025

Vol. 17, No. 1, Pages 101-106   DOI: 10.4416/JCST2025-00018

Abstract

The crystal structure, microstructure, and microwave dielectric properties of B₂O₃-V₂O₅ co-doped (Mg_1-xCu_x)₂SiO₄ (x=0.05 – 0.20) ceramics were investigated. The sintering temperature was successfully reduced to about 1 250 °C/4 h for the B₂O₃-V₂O₅ co-doped (Mg_1-xCu_x)₂SiO₄ specimens. The (Mg_0.95Cu_0.05)₂SiO₄ with 6 wt% B₂O₃ – 6 wt% V₂O₅ ceramics sintered at 1 250 °C for 4 h achieved excellent microwave dielectric properties of ε_r = 6.55, Q·ƒ = 37 500 GHz and a τ_ƒ of - 35.65 ppm/K.

Keywords

Microwave dielectric properties, B₂O₃-V₂O₅ co-doped, (Mg_0.95Cu_0.05)₂SiO₄, microwave ceramics

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