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Preparation of Silicon Carbide Powder with Ultra-Wide Particle Size Range and Controllable Morphology
Shengyuan Xu1,2, Shibo Guo1, Weiyou Yang2, Feng Hu2
1 School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, 411201, China.
2 Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China.
received April 13, 2024, received in revised form November 12, 2024, accepted November 18, 2024
Vol. 16, No. 1, Pages 11-20 DOI: 10.4416/JCST2024-00006
Abstract
Nanoscale(D50 = 83 nm), microscale(D50 = 32 μm), and millimeter-scale(D50 = 0.3 mm) pure phase β-SiC powders were synthesized through a two-step self-propagating high-temperature synthesis (SHS) method in an argon atmosphere, utilizing spherical-like graphite as the source materials with varied particle sizes. Accordingly, these spherical SiC powders were efficiently fabricated on a large scale by coating carbon spheres with molten silicon. It is found that the SiC powders are predominantly influenced by the characteristics of the carbon source employed, leading to their controllabe growth in particle size and morphology based on a typical vapor-solid (V-S) mechanism. In such process, the carbon particles are enclosed by liquid silicon within the reactive units, thus effectively maintaining their inherent morphology and size. This mechanism allows for strategic manipulation of the granularity and shape of SiC powders by varying the carbon feedstock.
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Keywords
Silicon carbide, self-propagating high temperature synthesis, controlled growth
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