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Contributions to Dielectric Constant Enhancement in Thin-Film Metal-Insulator-Metal
D.S. Krueger1, Z.J. Legenzoff1, J.A. Wolf1, J.B. Claypool2, R.W. Schwartz2, W. Huebner2
1 The Department of Energy's Kansas City National Security Campus, managed by Honeywell – Kansas City, MO
2 Missouri University of Science and Technology – Rolla, MO
received January 25, 2021, received in revised form December 27, 2021, accepted January 13, 2022
Vol. 13, No. 1, Pages 1-8 DOI: 10.4416/JCST2021-00001
Abstract
Thin-film metal-insulator-metal capacitors were fabricated with varying dielectric and electrode thicknesses and areas. Measurement of the dielectric properties of the capacitors consistently yielded higher than predicted capacitance values, which prompted the exploration of three factors that could enhance the capacitance. Modeling of the fringing capacitance and field enhancement due to the capacitor geometry, both yield capacitance gains, albeit insufficient to fully explain the observed behavior. The possible role of changes in polarizability of the dielectric film constituents, due to the amorphous nature of the films, was also evaluated, but the results of the investigation of this contribution were inconclusive. The role of accumulation/depletion layers on capacitance enhancement was also analyzed. For capacitors fabricated with thinner dielectrics, the presence of these layers can effectively reduce the dielectric thickness, resulting in contributions to capacitance that are significant. The calculations completed suggest these conbributions may be more important than fringing field contributions. Additional studies of these mechanisms are in progress.
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Keywords
Thin film capacitor, fringe field capacitance, dielectric enhancement
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