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Journal of Ceramic Science and Technology

The Journal of Ceramic Science and Technology publishes original scientific articles on all topics of ceramic science and technology from all ceramic branches. The focus is on the scientific exploration of  the relationships between processing, microstructure and properties of sintered ceramic materials as well as on new processing routes for innovative ceramic materials. The papers may have either theoretical or experimental background. A high quality of publications will be guaranteed by a thorough double blind peer review process.

The Journal is published by Göller Verlag GmbH on behalf of the Deutsche Keramische Gesellschaft (DKG). Edited by Yu-Ping Zeng, Shanghai Institute of Ceramics, Chinese Academy of Sciences, China.

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The Interaction of Stacking Faults and the Doping of Si in TiC

Q. Liu, F.G. Qi, X.L. Wang, H.M. Ding, Y. Shi

School of Energy Power and Mechanical Engineering, North China Electric Power University, Baoding 071003, PR China

received April 26, 2017, received in revised form May 21, 2017, accepted June 2, 2017

Vol. 8, No. 4, Pages 493-498   DOI: 10.4416/JCST2017-00027

Abstract

In this work, the interaction of stacking faults and the doping of Si in TiC has been studied. It has been found that the SFs and doping of Si influence each other, but the effect is limited. However, both of them are closely related to the carbon vacancies. It is considered that the carbon vacancies simultaneously promote the formation of SFs and the doping of Si, and then the doped Si and carbon vacancies tend to segregate in the SF layers, which can result in the formation of Ti3SiC2 platelets. And the segregation process can be enhanced by their easier diffusion in the SF layers.

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Keywords

Defects, ceramic, vacancies, simulation.

References

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