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Tape Casting of Si3N4 Sheets for Potential Use as Circuit Substrate for Power Devices
J. Zhang, Y. Duan, X. Li, D. Jiang
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, 1295 Dingxi Road, Shanghai 200050, China
received October 31, 2016, received in revised form February 12, 2017, accepted February 15, 2017
Vol. 8, No. 1, Pages 149-154 DOI: 10.4416/JCST2016-00120
Abstract
Si3N4 ceramics exhibit superior mechanical and electrical properties and potentially high thermal conductivity (200 – 320 W/m·K) at room temperature. They are an excellent prospective circuit substrate for power electronic devices. The literature reports that a great deal of work has been conducted on Si3N4, and Si3N4 ceramics with thermal conductivity as high as 177 W/m·K have been realized. One of the main barriers for the application of Si3N4 is the high cost of their fabrication. Tape casting is a flexible technique for the preparation of ceramic sheets with well-controlled composition and dimensions, and presents a prospective route for the development of Si3N4 substrate at reduced cost.
In this study, Si3N4 substrate was prepared by means of tape casting and the sintered reaction-bonded silicon nitride (SRBSN) technique. Initially, silicon green tapes were prepared by means of organic-solvent-based tape casting. The influences of binder content, plasticizer/binder ratio and solid loading on the tape properties were investigated and optimized. Subsequently, the nitration and sintering process was optimized. The microstructure and thermal properties of the Si3N4 ceramics were investigated. Results showed that the preparation of Si3N4 ceramics by means of tape casting and the reaction-bonded silicon nitride (SRBSN) technique is feasible.
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Keywords
Silicon nitride, tape casting, thermal conductivity
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