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Effects of Annealing Temperature on Infrared Spectra of SiO2 Extracted From Rice Husk
M. H. Shahrokh Abadi1, A. Delbari1, Z. Fakoor1, J. Baedi2
1 Electronic Dept. of Electrical and Computer Engineering Faculty, Hakim Sabzevari University, Sabzevar, Iran
2 Physics Dept. of Science Faculty, Hakim Sabzevari University, Sabzevar, Iran
received July 17, 2014, received in revised form August 29, 2014, accepted September 27, 2014
Vol. 6, No. 1, Pages 41-46 DOI: 10.4416/JCST2014-00028
Abstract
The effects of the annealing temperature on the structures and quantities of silicon dioxide obtained from rice husk by means of thermal treatment followed by acid leaching were studied with infrared transmission in the wavenumber range 400 – 4000 cm-1. The Fourier Transform Infrared Radiometer (FTIR) spectra of five series of samples including rice husk, rice husk ash burnt at 800 °C, and rice husk ash annealed at 900, 1000, and 1100 °C were analyzed and compared. It was demonstrated that the main absorption Si-O-Si bending band shifts towards lower wavenumbers while the peaks of stretching and rocking bands of Si-O-Si monotonically shift toward higher wavenumbers as the annealing temperature is increased. Analysis of the transmission samples showed that the shape of Si-O-Si bonds changes owing to the annealing temperature, varying in the range of 8 to 40 cm-1.
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Keywords
FTIR, transmittance, SiO2, rice husk, bond structure, stretching, bending, rocking.
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